Michael Guillorn received his Bachelors of Engineering degree with a concentration in Electrical Engineering from Trinity College, Hartford CT, in 1998.  He received a PhD in Materials Science and Engineering from the University of Tennessee, Knoxville TN, in 2003. While performing his PhD research, Michael worked at the Oak Ridge National Laboratory as a staff engineer from 2000 to 2003. His PhD and professional scientific work focused on the use of nanostructured carbon based materials as field emission electron sources. In 2003 Michael joined the staff of the Cornell Nanofabrication Facility. He supported users of the facility in the areas of electron beam and photolithography integration, mask making and thin film process integration. In 2006 Michael joined the IBM TJ Watson Research Center as a research staff member. His current research work involves pushing the limits of CMOS density scaling setting the record for SRAM bitcell density scaling demonstrations in 2009 and 2011.  In 2010 Michael became the manager of the Electron Beam Lithography and Nanofabrication research group.  Michael has authored over 50 publications in peer reviewed journals and holds 9 US patents.